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IPB014N06NATMA1

MOSFET N-CH 60V 34A TO263-7


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB014N06NATMA1
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Datasheet: PDF
  • Stock: 698
  • Description: MOSFET N-CH 60V 34A TO263-7 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta 214W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 214W
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 2.8V @ 143μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 7800pF @ 30V
Current - Continuous Drain (Id) @ 25°C 34A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V
Rise Time 18ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 2.8V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain Current-Max (Abs) (ID) 34A
Drain-source On Resistance-Max 0.0014Ohm
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 420 mJ
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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