Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-7, D2Pak (6 Leads + Tab) |
Number of Pins | 7 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Cut Tape (CT) |
Published | 2008 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.29.00.95 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G6 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 3W Ta 214W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 214W |
Case Connection | DRAIN |
Turn On Delay Time | 22 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.4m Ω @ 100A, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 143μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 7800pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 34A Ta 180A Tc |
Gate Charge (Qg) (Max) @ Vgs | 106nC @ 10V |
Rise Time | 18ns |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 14 ns |
Turn-Off Delay Time | 47 ns |
Continuous Drain Current (ID) | 180A |
Threshold Voltage | 2.8V |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 60V |
Drain Current-Max (Abs) (ID) | 34A |
Drain-source On Resistance-Max | 0.0014Ohm |
Drain to Source Breakdown Voltage | 60V |
Avalanche Energy Rating (Eas) | 420 mJ |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |