IPB049NE7N3GATMA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Gate to Source Voltage (Vgs) | 20V |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Drain-source On Resistance-Max | 0.0049Ohm |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | OptiMOS™ |
| DS Breakdown Voltage-Min | 75V |
| JESD-609 Code | e3 |
| REACH SVHC | No SVHC |
| Pbfree Code | no |
| RoHS Status | ROHS3 Compliant |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 150W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 150W |
| Case Connection | DRAIN |
| Turn On Delay Time | 14 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.9m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 91μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4750pF @ 37.5V |
| Current - Continuous Drain (Id) @ 25°C | 80A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
| Rise Time | 11ns |
| Drain to Source Voltage (Vdss) | 75V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 80A |
| Threshold Voltage | 3.1V |
See Relate Datesheet
