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IPB054N06N3GATMA1

Trans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB054N06N3GATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 828
  • Description: Trans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 115W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 115W
Case Connection DRAIN
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 58μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 30V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Rise Time 68ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.0057Ohm
Avalanche Energy Rating (Eas) 77 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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