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IPB057N06NATMA1

MOSFET N-CH 60V 17A TO263-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB057N06NATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 255
  • Description: MOSFET N-CH 60V 17A TO263-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Published 2012
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3W Ta 83W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 83W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.7m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 2.8V @ 36μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 30V
Current - Continuous Drain (Id) @ 25°C 17A Ta 45A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 45A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.0057Ohm
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 60 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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