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IPB083N10N3GATMA1

IPB083N10N3GXT


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB083N10N3GATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 765
  • Description: IPB083N10N3GXT (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 125W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.3m Ω @ 73A, 10V
Vgs(th) (Max) @ Id 3.5V @ 75μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 50V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 42ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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