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IPB100N04S4H2ATMA1

MOSFET N-CH 40V 100A TO263-3-2


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB100N04S4H2ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 414
  • Description: MOSFET N-CH 40V 100A TO263-3-2 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 115W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 70μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 7180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Rise Time 13ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0024Ohm
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 280 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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