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IPB117N20NFDATMA1

IPB117N20NFDATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB117N20NFDATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 748
  • Description: IPB117N20NFDATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Published 2013
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
Drain to Source Breakdown Voltage 200V
Series OptiMOS™
Max Junction Temperature (Tj) 175°C
Height 4.82mm
JESD-609 Code e3
REACH SVHC No SVHC
Part Status Active
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Factory Lead Time 1 Week
Rds On (Max) @ Id, Vgs 11.7m Ω @ 84A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Mount Surface Mount
Mounting Type Surface Mount
Halogen Free Halogen Free
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds 6650pF @ 100V
Current - Continuous Drain (Id) @ 25°C 84A Tc
Number of Pins 3
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Rise Time 10ns
Weight 1.946308g
Drive Voltage (Max Rds On,Min Rds On) 10V
Transistor Element Material SILICON
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Operating Temperature -55°C~175°C TJ
Turn-Off Delay Time 24 ns
Packaging Cut Tape (CT)
Continuous Drain Current (ID) 84A
Threshold Voltage 3V
See Relate Datesheet

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