banner_page

IPB120N10S405ATMA1

Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB120N10S405ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 858
  • Description: Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Kg)

Details

Tags

Parameters
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.005Ohm
Pulsed Drain Current-Max (IDM) 480A
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 190W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 120μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 6540pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good