IPB180N04S4H0ATMA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-7, D2Pak (6 Leads + Tab) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PSSO-G6 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 250W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.1m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 180μA |
| Input Capacitance (Ciss) (Max) @ Vds | 17940pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 180A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 225nC @ 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 180A |
| Drain-source On Resistance-Max | 0.0011Ohm |
| Pulsed Drain Current-Max (IDM) | 720A |
| DS Breakdown Voltage-Min | 40V |
| Avalanche Energy Rating (Eas) | 850 mJ |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
