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IPB22N03S4L15ATMA1

MOSFET N-CH 30V 22A TO263-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB22N03S4L15ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 151
  • Description: MOSFET N-CH 30V 22A TO263-3 (Kg)

Details

Tags

Parameters
Terminal Finish Tin (Sn)
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Additional Feature ULTRA LOW RESISTANCE
Vgs (Max) ±16V
Technology MOSFET (Metal Oxide)
Continuous Drain Current (ID) 22A
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.0146Ohm
Terminal Position SINGLE
Pulsed Drain Current-Max (IDM) 88A
Terminal Form GULL WING
Avalanche Energy Rating (Eas) 20 mJ
Peak Reflow Temperature (Cel) NOT SPECIFIED
RoHS Status ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Lead Free Contains Lead
JESD-30 Code R-PSSO-G2
Number of Elements 1
Factory Lead Time 1 Week
Configuration SINGLE WITH BUILT-IN DIODE
Mount Surface Mount
Mounting Type Surface Mount
Power Dissipation-Max 31W Tc
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Mode ENHANCEMENT MODE
Operating Temperature -55°C~175°C TJ
Case Connection DRAIN
Packaging Tape & Reel (TR)
Published 2007
FET Type N-Channel
Series OptiMOS™
Rds On (Max) @ Id, Vgs 14.6m Ω @ 22A, 10V
JESD-609 Code e3
Vgs(th) (Max) @ Id 2.2V @ 10μA
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Halogen Free Halogen Free
Number of Terminations 2
Input Capacitance (Ciss) (Max) @ Vds 980pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Tc
ECCN Code EAR99
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
See Relate Datesheet

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