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IPB240N03S4LR9ATMA1

MOSFET N-CH TO263-7


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB240N03S4LR9ATMA1
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Datasheet: PDF
  • Stock: 231
  • Description: MOSFET N-CH TO263-7 (Kg)

Details

Tags

Parameters
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 231W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 0.92m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 180μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 20300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 240A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Continuous Drain Current (ID) 240A
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.00145Ohm
Pulsed Drain Current-Max (IDM) 960A
Avalanche Energy Rating (Eas) 750 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
See Relate Datesheet

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