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IPB240N04S4R9ATMA1

MOSFET N-CH TO263-7


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB240N04S4R9ATMA1
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Datasheet: PDF
  • Stock: 883
  • Description: MOSFET N-CH TO263-7 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 0.87m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 230μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 240A Tc
Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 240A
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.00087Ohm
Pulsed Drain Current-Max (IDM) 960A
Avalanche Energy Rating (Eas) 750 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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