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IPB50N12S3L15ATMA1

MOSFET N-CHANNEL_100+


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB50N12S3L15ATMA1
  • Package: -
  • Datasheet: PDF
  • Stock: 128
  • Description: MOSFET N-CHANNEL_100+ (Kg)

Details

Tags

Parameters
Operating Temperature (Min) -55°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-263AB
Drain Current-Max (Abs) (ID) 50A
Drain-source On Resistance-Max 0.0206Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 120V
Avalanche Energy Rating (Eas) 330 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
See Relate Datesheet

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