IPB50N12S3L15ATMA1
| Parameters | |
|---|---|
| Operating Temperature (Min) | -55°C |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Polarity/Channel Type | N-CHANNEL |
| JEDEC-95 Code | TO-263AB |
| Drain Current-Max (Abs) (ID) | 50A |
| Drain-source On Resistance-Max | 0.0206Ohm |
| Pulsed Drain Current-Max (IDM) | 200A |
| DS Breakdown Voltage-Min | 120V |
| Avalanche Energy Rating (Eas) | 330 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PSSO-G2 |
See Relate Datesheet
