IPB60R040C7ATMA1
| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 40mOhm @ 24.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1.24mA |
| Input Capacitance (Ciss) (Max) @ Vds | 4340pF @ 400V |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 107nC @ 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 81 ns |
| Continuous Drain Current (ID) | 50A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 600V |
| Max Junction Temperature (Tj) | 150°C |
| Drain to Source Resistance | 34mOhm |
| Height | 4.5mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
| Supplier Device Package | PG-TO263-3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Series | CoolMOS™ C7 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 227W Tc |
| Power Dissipation | 227W |
| Turn On Delay Time | 18.5 ns |
| FET Type | N-Channel |
See Relate Datesheet
