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IPB60R060C7ATMA1

MOSFET N-CH 600V TO263-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB60R060C7ATMA1
  • Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
  • Datasheet: PDF
  • Stock: 344
  • Description: MOSFET N-CH 600V TO263-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series CoolMOS™ C7
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 162W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 15.9A, 10V
Vgs(th) (Max) @ Id 4V @ 800μA
Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 400V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-263AB
Drain Current-Max (Abs) (ID) 35A
Drain-source On Resistance-Max 0.06Ohm
Pulsed Drain Current-Max (IDM) 135A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 159 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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