Parameters | |
---|---|
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
Series | CoolMOS™ |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 255W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 99m Ω @ 18A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 31A Tc |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Drain Current-Max (Abs) (ID) | 31A |
Drain-source On Resistance-Max | 0.099Ohm |
Pulsed Drain Current-Max (IDM) | 93A |
DS Breakdown Voltage-Min | 600V |
Avalanche Energy Rating (Eas) | 800 mJ |
RoHS Status | ROHS3 Compliant |