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IPB60R099CPATMA1

Trans MOSFET N-CH 650V 31A Automotive 3-Pin(2+Tab) TO-263


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB60R099CPATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 485
  • Description: Trans MOSFET N-CH 650V 31A Automotive 3-Pin(2+Tab) TO-263 (Kg)

Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series CoolMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 255W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 99m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 100V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 31A
Drain-source On Resistance-Max 0.099Ohm
Pulsed Drain Current-Max (IDM) 93A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 800 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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