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IPB60R160C6ATMA1

Single N-Channel 600 V 160 mOhm 75 nC CoolMOS? Power Mosfet - D2PAK


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB60R160C6ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 535
  • Description: Single N-Channel 600 V 160 mOhm 75 nC CoolMOS? Power Mosfet - D2PAK (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 2
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 176W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 176W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 11.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 750μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1660pF @ 100V
Current - Continuous Drain (Id) @ 25°C 23.8A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 96 ns
Continuous Drain Current (ID) 23.8A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 497 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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