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IPB60R160P6ATMA1

MOSFET N-CH TO263-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB60R160P6ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 608
  • Description: MOSFET N-CH TO263-3 (Kg)

Details

Tags

Parameters
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 100V
Current - Continuous Drain (Id) @ 25°C 23.8A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 23.8A
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.16Ohm
Pulsed Drain Current-Max (IDM) 68A
Avalanche Energy Rating (Eas) 497 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™ P6
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 176W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 750μA
See Relate Datesheet

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