Parameters | |
---|---|
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | CoolMOS™ |
Pbfree Code | no |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Voltage - Rated DC | 600V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Current Rating | 21A |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 192W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 192W |
Case Connection | DRAIN |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 165m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 790μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 21A Tc |
Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
Rise Time | 5ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 5 ns |
Turn-Off Delay Time | 50 ns |
Continuous Drain Current (ID) | 21A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 600V |
Avalanche Energy Rating (Eas) | 522 mJ |
Radiation Hardening | No |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
RoHS Status | ROHS3 Compliant |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lead Free | Contains Lead |