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IPB60R165CPATMA1

Trans MOSFET N-CH 650V 21A 3-Pin(2+Tab) TO-263


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB60R165CPATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 207
  • Description: Trans MOSFET N-CH 650V 21A 3-Pin(2+Tab) TO-263 (Kg)

Details

Tags

Parameters
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Current Rating 21A
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 192W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 192W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 165m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3.5V @ 790μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 100V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Avalanche Energy Rating (Eas) 522 mJ
Radiation Hardening No
Factory Lead Time 1 Week
Mount Surface Mount
RoHS Status ROHS3 Compliant
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lead Free Contains Lead
See Relate Datesheet

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