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IPB60R360P7ATMA1

MOSFET TO263-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB60R360P7ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 812
  • Description: MOSFET TO263-3 (Kg)

Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 555pF @ 400V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.36Ohm
Factory Lead Time 1 Week
Mounting Type Surface Mount
Pulsed Drain Current-Max (IDM) 26A
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
DS Breakdown Voltage-Min 600V
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Avalanche Energy Rating (Eas) 27 mJ
Packaging Tape & Reel (TR)
Published 2014
RoHS Status ROHS3 Compliant
Series CoolMOS™ P7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 41W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 140μA
See Relate Datesheet

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