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IPB60R385CPATMA1

MOSFET N-CH 600V 9A TO-263


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB60R385CPATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 204
  • Description: MOSFET N-CH 600V 9A TO-263 (Kg)

Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series CoolMOS™
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Pin Count 4
Power Dissipation-Max 83W Tc
Element Configuration Single
Power Dissipation 83W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 385m Ω @ 5.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 340μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 100V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 9A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 650V
Nominal Vgs 3 V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
See Relate Datesheet

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