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IPB65R099C6ATMA1

Trans MOSFET N-CH 650V 38A 3-Pin(2+Tab) D2PAK T/R


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB65R099C6ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 649
  • Description: Trans MOSFET N-CH 650V 38A 3-Pin(2+Tab) D2PAK T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2008
Series CoolMOS™
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 278W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 99m Ω @ 12.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2780pF @ 100V
Current - Continuous Drain (Id) @ 25°C 38A Tc
Gate Charge (Qg) (Max) @ Vgs 127nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 77 ns
Continuous Drain Current (ID) 38A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.099Ohm
Pulsed Drain Current-Max (IDM) 115A
Avalanche Energy Rating (Eas) 845 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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