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IPB65R190CFDAATMA1

MOSFET N-CH TO263-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB65R190CFDAATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 246
  • Description: MOSFET N-CH TO263-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK (TO-263AB)
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series Automotive, AEC-Q101, CoolMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 151W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 700μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 100V
Current - Continuous Drain (Id) @ 25°C 17.5A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 17.5A
Max Dual Supply Voltage 650V
Input Capacitance 1.85nF
Rds On Max 190 mΩ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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