Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | CoolMOS™ |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 62.5W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 9 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 660m Ω @ 2.1A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 200μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 615pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 6A Tc |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Rise Time | 8ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 10 ns |
Turn-Off Delay Time | 40 ns |
Continuous Drain Current (ID) | 6A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 650V |
Drain Current-Max (Abs) (ID) | 6A |
Drain-source On Resistance-Max | 0.66Ohm |
Pulsed Drain Current-Max (IDM) | 17A |
Avalanche Energy Rating (Eas) | 115 mJ |
RoHS Status | RoHS Compliant |
Lead Free | Contains Lead |