IPB80N04S2H4ATMA2
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Package / Case | TO-263-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300W |
| Case Connection | DRAIN |
| Turn On Delay Time | 23 ns |
| Halogen Free | Halogen Free |
| Rise Time | 63ns |
| Drain to Source Voltage (Vdss) | 40V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 22 ns |
| Turn-Off Delay Time | 46 ns |
| Continuous Drain Current (ID) | 80A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 40V |
| Drain to Source Breakdown Voltage | 40V |
| Input Capacitance | 4.4nF |
| Avalanche Energy Rating (Eas) | 660 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Rds On Max | 3.7 mΩ |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
