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IPB80N04S403ATMA1

Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-263


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB80N04S403ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 572
  • Description: Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-263 (Kg)

Details

Tags

Parameters
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series OptiMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 94W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 53μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5260pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Avalanche Energy Rating (Eas) 200 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
See Relate Datesheet

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