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IPB80N06S207ATMA1

Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB80N06S207ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 723
  • Description: Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263 (Kg)

Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 37ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 61 ns
Continuous Drain Current (ID) 80A
Max Dual Supply Voltage 55V
RoHS Status ROHS3 Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series OptiMOS™
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 250W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.3m Ω @ 68A, 10V
Vgs(th) (Max) @ Id 4V @ 180μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3400pF @ 25V
See Relate Datesheet

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