IPB80N06S2L07ATMA3
| Parameters | |
|---|---|
| Continuous Drain Current (ID) | 80A |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Max Dual Supply Voltage | 55V |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Drain-source On Resistance-Max | 0.0097Ohm |
| Published | 2006 |
| Series | OptiMOS™ |
| Pbfree Code | yes |
| Pulsed Drain Current-Max (IDM) | 320A |
| Part Status | Active |
| Avalanche Energy Rating (Eas) | 450 mJ |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| RoHS Status | ROHS3 Compliant |
| Number of Terminations | 2 |
| Lead Free | Contains Lead |
| ECCN Code | EAR99 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 210W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 6.7m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3160pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 80A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
See Relate Datesheet
