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IPB80N06S4L05ATMA2

MOSFET N-CH 60V 80A TO263-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB80N06S4L05ATMA2
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 688
  • Description: MOSFET N-CH 60V 80A TO263-3 (Kg)

Details

Tags

Parameters
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 107W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 107W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.1m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 60μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 8180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.0048Ohm
Drain to Source Breakdown Voltage 60V
Height 4.4mm
Length 10mm
Width 9.25mm
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.946308g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101, OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
See Relate Datesheet

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