IPB80P04P4L04ATMA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 125W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 125W |
| Case Connection | DRAIN |
| Turn On Delay Time | 28 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 4.4m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 3800pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 80A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 176nC @ 10V |
| Rise Time | 13ns |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 65 ns |
| Turn-Off Delay Time | 119 ns |
| Continuous Drain Current (ID) | -80A |
| Gate to Source Voltage (Vgs) | 16V |
| Max Dual Supply Voltage | -40V |
| Drain-source On Resistance-Max | 0.0071Ohm |
| Drain to Source Breakdown Voltage | -40V |
| Avalanche Energy Rating (Eas) | 60 mJ |
| Height | 4.4mm |
| Length | 10mm |
| Width | 9.25mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet
