IPB90R340C3ATMA1
| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Terminal Form | GULL WING |
| Lead Free | Contains Lead |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 208W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 208W |
| Case Connection | DRAIN |
| Turn On Delay Time | 70 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 340m Ω @ 9.2A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Halogen Free | Halogen Free |
| Factory Lead Time | 1 Week |
| Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 100V |
| Mount | Surface Mount |
| Current - Continuous Drain (Id) @ 25°C | 15A Tc |
| Mounting Type | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs | 94nC @ 10V |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Rise Time | 20ns |
| Transistor Element Material | SILICON |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Operating Temperature | -55°C~150°C TJ |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 25 ns |
| Packaging | Cut Tape (CT) |
| Published | 2012 |
| Turn-Off Delay Time | 400 ns |
| Series | CoolMOS™ |
| Continuous Drain Current (ID) | 15A |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Gate to Source Voltage (Vgs) | 20V |
| Part Status | Not For New Designs |
| Max Dual Supply Voltage | 900V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Drain-source On Resistance-Max | 0.34Ohm |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Pulsed Drain Current-Max (IDM) | 34A |
| Avalanche Energy Rating (Eas) | 678 mJ |
| Terminal Position | SINGLE |
See Relate Datesheet
