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IPD025N06NATMA1

Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-252


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPD025N06NATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 879
  • Description: Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-252 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3W Ta 167W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 2.8V @ 95μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 30V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 90A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain Current-Max (Abs) (ID) 26A
Drain-source On Resistance-Max 0.0025Ohm
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 175°C
Height 2.5mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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