Parameters | |
---|---|
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5.3m Ω @ 45A, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 36μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 18A Ta 45A Tc |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Rise Time | 12ns |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 7 ns |
Turn-Off Delay Time | 20 ns |
Continuous Drain Current (ID) | 45A |
JEDEC-95 Code | TO-252AA |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 60V |
Avalanche Energy Rating (Eas) | 60 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Cut Tape (CT) |
Published | 2008 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 3W Ta 83W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3W |
Case Connection | DRAIN |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |