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IPD075N03LGATMA1

MOSFET -


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPD075N03LGATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 692
  • Description: MOSFET - (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 47W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 47W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 3.6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.8 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 50 mJ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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