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IPD25CN10NGATMA1

Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-252


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPD25CN10NGATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 790
  • Description: Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-252 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 71W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 71W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 39μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 50V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.025Ohm
Pulsed Drain Current-Max (IDM) 140A
Avalanche Energy Rating (Eas) 65 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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