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IPD30N10S3L34ATMA1

Trans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) TO-252


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPD30N10S3L34ATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 825
  • Description: Trans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) TO-252 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 57W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 57W
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 31m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.4V @ 29μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1976pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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