Parameters | |
---|---|
Technology | MOSFET (Metal Oxide) |
Lead Free | Contains Lead |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 136W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 32m Ω @ 34A, 10V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Vgs(th) (Max) @ Id | 4V @ 90μA |
Number of Pins | 3 |
Halogen Free | Halogen Free |
Transistor Element Material | SILICON |
Input Capacitance (Ciss) (Max) @ Vds | 2350pF @ 100V |
Operating Temperature | -55°C~175°C TJ |
Current - Continuous Drain (Id) @ 25°C | 34A Tc |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | OptiMOS™ |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
JESD-609 Code | e3 |
Continuous Drain Current (ID) | 34A |
Part Status | Active |
JEDEC-95 Code | TO-252AA |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Max Dual Supply Voltage | 200V |
ECCN Code | EAR99 |
Avalanche Energy Rating (Eas) | 190 mJ |
RoHS Status | ROHS3 Compliant |
Terminal Finish | Tin (Sn) |