Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | OptiMOS™ |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Additional Feature | ULTRA-LOW RESISTANCE |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Reference Standard | AEC-Q101 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 136W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 136W |
Case Connection | DRAIN |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 14.4m Ω @ 32A, 10V |
Vgs(th) (Max) @ Id | 4V @ 80μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 1485pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 50A Tc |
Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
Rise Time | 29ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 19 ns |
Turn-Off Delay Time | 30 ns |
Continuous Drain Current (ID) | 50A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 55V |
Drain-source On Resistance-Max | 0.0144Ohm |
Drain to Source Breakdown Voltage | 55V |
Pulsed Drain Current-Max (IDM) | 200A |
Avalanche Energy Rating (Eas) | 240 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |