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IPD50N06S214ATMA2

MOSFET N-CH 55V 50A TO252-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPD50N06S214ATMA2
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 305
  • Description: MOSFET N-CH 55V 50A TO252-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 136W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 136W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 14.4m Ω @ 32A, 10V
Vgs(th) (Max) @ Id 4V @ 80μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1485pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Rise Time 29ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.0144Ohm
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 240 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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