Parameters | |
---|---|
Case Connection | DRAIN |
Turn On Delay Time | 17 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 12.6m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id | 4V @ 85μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 3670pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 50A Tc |
Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
Rise Time | 10ns |
Factory Lead Time | 1 Week |
Drain to Source Voltage (Vdss) | 40V |
Mount | Surface Mount |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Mounting Type | Surface Mount |
Vgs (Max) | ±20V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Fall Time (Typ) | 28 ns |
Transistor Element Material | SILICON |
Turn-Off Delay Time | 22 ns |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
Series | OptiMOS™ |
Continuous Drain Current (ID) | 50A |
JESD-609 Code | e3 |
Gate to Source Voltage (Vgs) | 20V |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Dual Supply Voltage | -40V |
Number of Terminations | 2 |
Drain-source On Resistance-Max | 0.0126Ohm |
ECCN Code | EAR99 |
Pulsed Drain Current-Max (IDM) | 20A |
Terminal Finish | Tin (Sn) |
Avalanche Energy Rating (Eas) | 18 mJ |
Technology | MOSFET (Metal Oxide) |
RoHS Status | ROHS3 Compliant |
Terminal Position | SINGLE |
Lead Free | Contains Lead |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Reference Standard | AEC-Q101 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 58W Tc |
Operating Mode | ENHANCEMENT MODE |