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IPD50R380CEAUMA1

IPD50R380CEAUMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPD50R380CEAUMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 727
  • Description: IPD50R380CEAUMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Height 2.55mm
Factory Lead Time 1 Week
RoHS Status ROHS3 Compliant
Mount Surface Mount
Mounting Type Surface Mount
Lead Free Contains Lead
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 98W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 98W
Case Connection DRAIN
Turn On Delay Time 7.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 3.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 260μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 584pF @ 100V
Current - Continuous Drain (Id) @ 25°C 14.1A Tc
Gate Charge (Qg) (Max) @ Vgs 24.8nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs (Max) ±20V
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 14.1A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
Drain to Source Breakdown Voltage 500V
Max Junction Temperature (Tj) 150°C
FET Feature Super Junction
See Relate Datesheet

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