Parameters | |
---|---|
Height | 2.55mm |
Factory Lead Time | 1 Week |
RoHS Status | ROHS3 Compliant |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Lead Free | Contains Lead |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | CoolMOS™ |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 98W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 98W |
Case Connection | DRAIN |
Turn On Delay Time | 7.2 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 380m Ω @ 3.2A, 13V |
Vgs(th) (Max) @ Id | 3.5V @ 260μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 584pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 14.1A Tc |
Gate Charge (Qg) (Max) @ Vgs | 24.8nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 13V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 35 ns |
Continuous Drain Current (ID) | 14.1A |
Threshold Voltage | 3V |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 500V |
Drain to Source Breakdown Voltage | 500V |
Max Junction Temperature (Tj) | 150°C |
FET Feature | Super Junction |