Parameters | |
---|---|
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 57W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 500m Ω @ 2.3A, 13V |
Vgs(th) (Max) @ Id | 3.5V @ 200μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 433pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 7.6A Tc |
Gate Charge (Qg) (Max) @ Vgs | 18.7nC @ 10V |
Drain to Source Voltage (Vdss) | 550V |
Drive Voltage (Max Rds On,Min Rds On) | 13V |
Vgs (Max) | ±20V |
Max Dual Supply Voltage | 500V |
Drain-source On Resistance-Max | 0.5Ohm |
Pulsed Drain Current-Max (IDM) | 24A |
Avalanche Energy Rating (Eas) | 129 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
Series | CoolMOS™ |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 2 |
ECCN Code | EAR99 |