IPD50R950CEAUMA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Package / Case | TO-252-3 |
| Number of Pins | 3 |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 34W |
| Terminal Form | GULL WING |
| Reach Compliance Code | not_compliant |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 34W |
| Turn On Delay Time | 7 ns |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Rise Time | 4.9ns |
| Drain to Source Voltage (Vdss) | 500V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 19.5 ns |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 4.3A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 500V |
| Drain to Source Breakdown Voltage | 500V |
| Pulsed Drain Current-Max (IDM) | 12.8A |
| Input Capacitance | 231pF |
| Avalanche Energy Rating (Eas) | 68 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 950mOhm |
| Rds On Max | 950 mΩ |
| Height | 2.41mm |
| Length | 6.73mm |
| Width | 6.22mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
See Relate Datesheet
