Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Weight | 3.949996g |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2015 |
Series | CoolMOS™ CE |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 37W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 10 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1 Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 130μA |
Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 4.3A Tc |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Rise Time | 8ns |
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 13 ns |
Turn-Off Delay Time | 60 ns |
Continuous Drain Current (ID) | 4.3A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 1Ohm |
DS Breakdown Voltage-Min | 600V |
Avalanche Energy Rating (Eas) | 46 mJ |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |