IPD60R1K4C6
| Parameters | |
|---|---|
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 3.2A |
| Pulsed Drain Current-Max (IDM) | 8A |
| DS Breakdown Voltage-Min | 600V |
| Avalanche Energy Rating (Eas) | 26 mJ |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | CoolMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 28.4W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.4 Ω @ 1.1A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 90μA |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V |
See Relate Datesheet
