IPD60R1K4C6ATMA1
| Parameters | |
|---|---|
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | CoolMOS™ C6 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Reach Compliance Code | not_compliant |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 28.4W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.4 Ω @ 1.1A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 90μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 3.2A |
| Max Dual Supply Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 8A |
| Avalanche Energy Rating (Eas) | 26 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
See Relate Datesheet
