IPD60R1K5CEATMA1
| Parameters | |
|---|---|
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 8A |
| Avalanche Energy Rating (Eas) | 26 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Weight | 3.949996g |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Series | CoolMOS™ CE |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 28W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.5 Ω @ 1.1A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 90μA |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
| Rise Time | 7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 3.1A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 5A |
See Relate Datesheet
