Parameters | |
---|---|
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 38W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.1 Ω @ 760mA, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 60μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 2.3A Tc |
Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
Factory Lead Time | 1 Week |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Mount | Surface Mount |
Vgs (Max) | ±20V |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Continuous Drain Current (ID) | 2.3A |
Transistor Element Material | SILICON |
Max Dual Supply Voltage | 600V |
Operating Temperature | -40°C~150°C TJ |
Pulsed Drain Current-Max (IDM) | 6A |
Packaging | Tape & Reel (TR) |
Avalanche Energy Rating (Eas) | 11 mJ |
Published | 2008 |
Series | CoolMOS™ CE |
JESD-609 Code | e3 |
Pbfree Code | yes |
RoHS Status | ROHS3 Compliant |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 2 |
Lead Free | Contains Lead |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |