Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Weight | 3.949996g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | CoolMOS™ C6 |
JESD-609 Code | e3 |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Tin (Sn) |
Additional Feature | HIGH VOLTAGE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 83W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 83W |
Case Connection | DRAIN |
Turn On Delay Time | 15 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 380m Ω @ 3.8A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 320μA |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 10.6A Tc |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
Rise Time | 10ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 9 ns |
Turn-Off Delay Time | 110 ns |
Continuous Drain Current (ID) | 10.6A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 600V |
Drain to Source Breakdown Voltage | 600V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |