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IPD60R380P6ATMA1

IPD60R380P6ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPD60R380P6ATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 541
  • Description: IPD60R380P6ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Weight 3.949996g
Rds On Max 380 mΩ
Operating Temperature -55°C~150°C TJ
RoHS Status ROHS3 Compliant
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™ P6
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 83W Tc
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 320μA
Input Capacitance (Ciss) (Max) @ Vds 877pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.6A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 6ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 10.6A
Factory Lead Time 1 Week
Gate to Source Voltage (Vgs) 20V
Mount Surface Mount
Max Dual Supply Voltage 600V
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Breakdown Voltage 600V
Number of Pins 3
Input Capacitance 877pF
Supplier Device Package PG-TO252-3
Drain to Source Resistance 342mOhm
See Relate Datesheet

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