Parameters | |
---|---|
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.3 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 40μA |
Input Capacitance (Ciss) (Max) @ Vds | 93pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 1.7A Tc |
Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 10V |
Rise Time | 10ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 60 ns |
Turn-Off Delay Time | 40 ns |
Continuous Drain Current (ID) | 1.7A |
Gate to Source Voltage (Vgs) | 30V |
Max Dual Supply Voltage | 600V |
Pulsed Drain Current-Max (IDM) | 4A |
Avalanche Energy Rating (Eas) | 6 mJ |
Height | 2.41mm |
Length | 6.73mm |
Width | 6.22mm |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Weight | 3.949996g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | CoolMOS™ C6 |
JESD-609 Code | e3 |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 18.1W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 8 ns |